Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDs

Ta Shan Chang, Ting Chang Chang*, Po-Tsun Liu, Tien Shan Chang, Feng Sheng Yeh

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

In this study, a low-k material, siloxane-based hydrogen silsesquioxane (HSQ) has been investigated for a passivation dielectric between the transistor and pixel levels in thin-film transistor (TFT) arrays. The characteristics of low-k dielectric film have been studied, especially under visible light illumination and electric operation. Compared with the conventional nitride film (k ∼ 7), the HSQ passivation layer (k ∼ 2.8) not only lowers the RC time delay in device, but also enhances the brightness of thin-film transistors liquid crystal displays (TFT-LCDs).

Original languageEnglish
Pages (from-to)70-74
Number of pages5
JournalThin Solid Films
Volume498
Issue number1-2
DOIs
StatePublished - 1 Mar 2006
EventProceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
Duration: 12 Nov 200414 Nov 2004

Keywords

  • Low-k
  • Passivation
  • TFT

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