In this study, a low-k material, siloxane-based hydrogen silsesquioxane (HSQ) has been investigated for a passivation dielectric between the transistor and pixel levels in thin-film transistor (TFT) arrays. The characteristics of low-k dielectric film have been studied, especially under visible light illumination and electric operation. Compared with the conventional nitride film (k ∼ 7), the HSQ passivation layer (k ∼ 2.8) not only lowers the RC time delay in device, but also enhances the brightness of thin-film transistors liquid crystal displays (TFT-LCDs).
|Number of pages||5|
|Journal||Thin Solid Films|
|State||Published - 1 Mar 2006|
|Event||Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - |
Duration: 12 Nov 2004 → 14 Nov 2004