Integrated device and circuit simulation of deep donor trapping effects in DCFL and SCFL inverters

Ta-Hui Wang*, Sheng Jyh Wu

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

An integrated device and circuit simulation has been performed to evaluate the DX-traps-induced performance degradation in direct-coupled FET logic (DCFL) and source-coupled FET logic (SCFL) AlGaAs/GaAs HEMT inverters. The origin of the DX centers are believed to be due to the complexes of donors (D) and the unknown defects (X). The variation of the output pulse width and the hysteretic characteristics of the input-output voltage transfer function in the inverters are modeled. In comparison with the DCFL inverter, this study shows that the DX-traps-incurred transient phenomena are significantly improved in the SCFL inverters.

Original languageEnglish
Pages (from-to)2184-2187
Number of pages4
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume4
DOIs
StatePublished - 1 Dec 1991
Event1991 IEEE International Symposium on Circuits and Systems Part 4 (of 5) - Singapore, Singapore
Duration: 11 Jun 199114 Jun 1991

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