Integrated Antennas on Si With over 100 GHz Performance, Fabricated Using an Optimized Proton Implantation Process

K. T. Chan*, Albert Chin, Ying-Dar Lin, Chi-Yang Chang, C. X. Zhu, M. F. Li, D. L. Kwong, S. McAlister, D. S. Duh, W. J. Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

50 Scopus citations

Abstract

We have improved the performance of integrated antennas on Si for possible application in wireless communications and wireless interconnects. For practical VLSI integration, we have reduced the antenna size and optimized the proton implantation to a low energy of ∼ 4 MeV with a depth of ∼ 175 μm. To avoid any possible contamination, the ion implantation is applied after device fabrication. Excellent performance such as very low RF power loss up to 50 GHz, record high 103 GHz antenna resonance, and sharp 5 GHz bandwidth have been achieved.

Original languageEnglish
Pages (from-to)487-489
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume13
Issue number11
DOIs
StatePublished - 1 Nov 2003

Keywords

  • Antenna
  • Implantation
  • Loss
  • RF
  • Transmission line

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