High performance antenna has been realized on proton-implanted Si with 106 Ω-cm resistivity. Sharp antenna resonance and low loss up to 20GHz are observed indicating the excellent antenna quality. In contrast, very poor antenna characteristics are found on conventional oxide-isolated Si because of the lossy substrate.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Jan 2001|