We report on the integration of AlInAs/InGaAs HEMT and HBT on a single wafer by a single epitaxial growth sequence. The AlInAs/InGaAs emitter-base interface of the HBT is engineered to provide a pulse-doped HEMT structure. Both the HEMT and HBT characteristics are demonstrated successfully. Preliminary microwave measurements indicate both f T and f max are more than 20 GHz for integrated HEMTs with 1-μm gatelength. This is the first demonstration of integrated HBT and HEMT operation on the same wafer without multiple regrowth sequences.
|Number of pages||4|
|Journal||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|State||Published - 1 Jan 1995|
|Event||Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn|
Duration: 9 May 1995 → 13 May 1995