Integrated AlInAs/InGaAs HEMT/HBT heterostructure grown by MBE

Y. K. Chen*, D. Humphrey, D. Sivco, A. Y. Cho, J. Lothian, J. M. Kuo, F. Ren, J. S. Weiner, A. Tate, Mau-Chung Chang, R. Bernescut

*Corresponding author for this work

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

We report on the integration of AlInAs/InGaAs HEMT and HBT on a single wafer by a single epitaxial growth sequence. The AlInAs/InGaAs emitter-base interface of the HBT is engineered to provide a pulse-doped HEMT structure. Both the HEMT and HBT characteristics are demonstrated successfully. Preliminary microwave measurements indicate both f T and f max are more than 20 GHz for integrated HEMTs with 1-μm gatelength. This is the first demonstration of integrated HBT and HEMT operation on the same wafer without multiple regrowth sequences.

Original languageEnglish
Pages (from-to)656-659
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
DOIs
StatePublished - 1 Jan 1995
EventProceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn
Duration: 9 May 199513 May 1995

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    Chen, Y. K., Humphrey, D., Sivco, D., Cho, A. Y., Lothian, J., Kuo, J. M., Ren, F., Weiner, J. S., Tate, A., Chang, M-C., & Bernescut, R. (1995). Integrated AlInAs/InGaAs HEMT/HBT heterostructure grown by MBE. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 656-659. https://doi.org/10.1109/ICIPRM.1995.522229