Integrated AlInAs/InGaAs HEMT/HBT heterostructure grown by MBE

Y. K. Chen; D. Humphrey; D. Sivco; A. Y. Cho; J. Lothian; J. M. Kuo; F. Ren; J. S. Weiner; A. Tate; Mau-Chung Chang; R. Bernescut

doi:10.1109/ICIPRM.1995.522229

Integrated AlInAs/InGaAs HEMT/HBT heterostructure grown by MBE

Y. K. Chen^*, D. Humphrey, D. Sivco, A. Y. Cho, J. Lothian, J. M. Kuo, F. Ren, J. S. Weiner, A. Tate, Mau-Chung Chang, R. Bernescut

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

We report on the integration of AlInAs/InGaAs HEMT and HBT on a single wafer by a single epitaxial growth sequence. The AlInAs/InGaAs emitter-base interface of the HBT is engineered to provide a pulse-doped HEMT structure. Both the HEMT and HBT characteristics are demonstrated successfully. Preliminary microwave measurements indicate both f _T and f _max are more than 20 GHz for integrated HEMTs with 1-μm gatelength. This is the first demonstration of integrated HBT and HEMT operation on the same wafer without multiple regrowth sequences.

Original language	English
Pages (from-to)	656-659
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
DOIs	https://doi.org/10.1109/ICIPRM.1995.522229
State	Published - 1 Jan 1995
Event	Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn Duration: 9 May 1995 → 13 May 1995

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@article{a7b02537321f491b8ae8b9254e199ee6,

title = "Integrated AlInAs/InGaAs HEMT/HBT heterostructure grown by MBE",

abstract = " We report on the integration of AlInAs/InGaAs HEMT and HBT on a single wafer by a single epitaxial growth sequence. The AlInAs/InGaAs emitter-base interface of the HBT is engineered to provide a pulse-doped HEMT structure. Both the HEMT and HBT characteristics are demonstrated successfully. Preliminary microwave measurements indicate both f T and f max are more than 20 GHz for integrated HEMTs with 1-μm gatelength. This is the first demonstration of integrated HBT and HEMT operation on the same wafer without multiple regrowth sequences. ",

author = "Chen, {Y. K.} and D. Humphrey and D. Sivco and Cho, {A. Y.} and J. Lothian and Kuo, {J. M.} and F. Ren and Weiner, {J. S.} and A. Tate and Mau-Chung Chang and R. Bernescut",

year = "1995",

month = jan,

day = "1",

doi = "10.1109/ICIPRM.1995.522229",

language = "English",

pages = "656--659",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 09-05-1995 Through 13-05-1995",

}

Integrated AlInAs/InGaAs HEMT/HBT heterostructure grown by MBE. / Chen, Y. K.; Humphrey, D.; Sivco, D.; Cho, A. Y.; Lothian, J.; Kuo, J. M.; Ren, F.; Weiner, J. S.; Tate, A.; Chang, Mau-Chung; Bernescut, R.

In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 01.01.1995, p. 656-659.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Integrated AlInAs/InGaAs HEMT/HBT heterostructure grown by MBE

AU - Chen, Y. K.

AU - Humphrey, D.

AU - Sivco, D.

AU - Cho, A. Y.

AU - Lothian, J.

AU - Kuo, J. M.

AU - Ren, F.

AU - Weiner, J. S.

AU - Tate, A.

AU - Chang, Mau-Chung

AU - Bernescut, R.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - We report on the integration of AlInAs/InGaAs HEMT and HBT on a single wafer by a single epitaxial growth sequence. The AlInAs/InGaAs emitter-base interface of the HBT is engineered to provide a pulse-doped HEMT structure. Both the HEMT and HBT characteristics are demonstrated successfully. Preliminary microwave measurements indicate both f T and f max are more than 20 GHz for integrated HEMTs with 1-μm gatelength. This is the first demonstration of integrated HBT and HEMT operation on the same wafer without multiple regrowth sequences.

AB - We report on the integration of AlInAs/InGaAs HEMT and HBT on a single wafer by a single epitaxial growth sequence. The AlInAs/InGaAs emitter-base interface of the HBT is engineered to provide a pulse-doped HEMT structure. Both the HEMT and HBT characteristics are demonstrated successfully. Preliminary microwave measurements indicate both f T and f max are more than 20 GHz for integrated HEMTs with 1-μm gatelength. This is the first demonstration of integrated HBT and HEMT operation on the same wafer without multiple regrowth sequences.

UR - http://www.scopus.com/inward/record.url?scp=0029235553&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.1995.522229

DO - 10.1109/ICIPRM.1995.522229

M3 - Conference article

AN - SCOPUS:0029235553

SP - 656

EP - 659

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

Y2 - 9 May 1995 through 13 May 1995

ER -