Abstract
We report on the integration of AlInAs/InGaAs HEMT and HBT on a single wafer by a single epitaxial growth sequence. The AlInAs/InGaAs emitter-base interface of the HBT is engineered to provide a pulse-doped HEMT structure. Both the HEMT and HBT characteristics are demonstrated successfully. Preliminary microwave measurements indicate both f T and f max are more than 20 GHz for integrated HEMTs with 1-μm gatelength. This is the first demonstration of integrated HBT and HEMT operation on the same wafer without multiple regrowth sequences.
Original language | English |
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Pages (from-to) | 656-659 |
Number of pages | 4 |
Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
DOIs | |
State | Published - 1 Jan 1995 |
Event | Proceedings of the 7th International Conference on Indium Phosphide and Related Materials - Sapporo, Jpn Duration: 9 May 1995 → 13 May 1995 |