Insulator-quantum Hall transition in monolayer epitaxial graphene

Lung I. Huang, Yanfei Yang, Randolph E. Elmquist, Shun-Tsung Lo*, Fan Hung Liu, Chi Te Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We observe temperature (T)-independent crossing points in the longitudinal resistivity ρxx, which are signatures of the insulator-quantum Hall (I-QH) transition, in all three devices. Upon converting the raw data into longitudinal and Hall conductivities σxx and σxy, in the most disordered device, we observed a T-driven flow diagram approximated by the semi-circle law as well as the T-independent point in σxy near e2/h. We discuss our experimental results in the context of the evolution of the zero-energy Landau level at low magnetic fields B. We also compare the observed strongly insulating behaviour with metallic behaviour and the absence of the I-QH transition in graphene on SiO2 prepared by mechanical exfoliation.

Original languageEnglish
Pages (from-to)71977-71982
Number of pages6
JournalRSC Advances
Volume6
Issue number76
DOIs
StatePublished - 1 Jan 2016

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