We demonstrate the good-performance In0.5Ga0.5 As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In0.5Ga 0.5As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 106cm-2. The performance of the MOSCAPs is comparable to that of In0.53 Ga 0.47 As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density Dit values of 5 × 1011-2×1012 eV-1̇cm -2 in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In0.5Ga0.5As/GaAs MOSCAPs obtained by conductance methods were shown.
- metal-organic chemical vapor deposition (MOCVD)
- metal-oxide-semiconductor (MOS) capacitor (MOSCAP)