In0.5Ga0.5As-based metal-oxide-semiconductor capacitor on GaAs substrate using metal-organic chemical vapor deposition

H. Q. Nguyen*, H. D. Trinh, E. Y. Chang, C. T. Lee, Shin Yuan Wang, H. W. Yu, C. H. Hsu, C. L. Nguyen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We demonstrate the good-performance In0.5Ga0.5 As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In0.5Ga 0.5As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 106cm-2. The performance of the MOSCAPs is comparable to that of In0.53 Ga 0.47 As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density Dit values of 5 × 1011-2×1012 eV-1̇cm -2 in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In0.5Ga0.5As/GaAs MOSCAPs obtained by conductance methods were shown.

Original languageEnglish
Article number6376156
Pages (from-to)235-240
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume60
Issue number1
DOIs
StatePublished - 1 Jan 2013

Keywords

  • AlO
  • InGaAs
  • metal-organic chemical vapor deposition (MOCVD)
  • metal-oxide-semiconductor (MOS) capacitor (MOSCAP)

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