In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate

M. L. Huang, S. W. Chang, M. K. Chen, C. H. Fan, H. T. Lin, C. H. Lin, R. L. Chu, K. Y. Lee, M. A. Khaderbad, Z. C. Chen, Chun-Hsiung Lin, C. H. Chen, L. T. Lin, H. J. Lin, H. C. Chang, C. L. Yang, Y. K. Leung, Y. C. Yeo, S. M. Jang, H. Y. HwangCarlos H. Diaz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

29 Scopus citations

Abstract

In0.53Ga0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In0.53Ga0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS∼95 mV/dec., Ion/Ioff ∼105, DIBL ∼51 mV/V at Vds = 0.5V for Lg=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high field effect mobility (μEF = 1837 cm2/V-s with EOT ∼ 0.9 nm) is among the highest values reported for surface channel In0.53Ga0.47As MOSFETs.

Original languageEnglish
Title of host publication2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT204-T205
ISBN (Electronic)9784863485013
DOIs
StatePublished - 25 Aug 2015
EventSymposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan
Duration: 16 Jun 201518 Jun 2015

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2015-August
ISSN (Print)0743-1562

Conference

ConferenceSymposium on VLSI Technology, VLSI Technology 2015
CountryJapan
CityKyoto
Period16/06/1518/06/15

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