In0.53Ga0.47As FinFET and GAA-FET with Remote-Plasma Treatment

Quang Ho Luc, Kun Sheng Yang, Jia Wei Lin, Chia Chi Chang, Huy Binh Do, Sa Hoang Huynh, Minh Thien Huu Ha, Tuan Anh Nguyen, Yueh Chin Lin, Chen-Ming Hu, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


This letter presents a remote NH3/N2 plasma treatment after gate oxide deposition for improving the electrical characteristics and the reliability of In0.53Ga0.47As FinFET. The plasma treatment enhanced drive current (IDS), transconductance (Gm), subthreshold swing (SS), flicker noise, and positive bias temperature lifetime, suggesting that this plasma treatment significantly improves the quality of the etched In0.53Ga0.47As channel interface. In0.53Ga0.47As FinFETs and gate-all-around FETs were fabricated with the proposed in situ remote-plasma treatment and characterized.

Original languageEnglish
Pages (from-to)339-342
Number of pages4
JournalIEEE Electron Device Letters
Issue number3
StatePublished - 1 Mar 2018


  • 3D MOSFETs
  • III-V
  • In GaAs
  • PBTI reliability
  • RP treatment

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