Inspection of the current-mirror mismatch by secondary electron potential contrast with in situ nanoprobe biasing

Po-Tsun Liu*, Jeng Han Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The mismatch mechanism in a current mirror consisting of laterally diffused p-channel MOS (LDPMOS) technology was investigated using a scanning electron microscope (SEM) with in situ nanoprobing. The electrical measurement found a saturation current mismatch of 52 μA between the LDPMOS transistors. Furthermore, the proposed inspection identified successfully 0.4-μm p-well layer misalignment, which was the root cause of the mismatch. This letter demonstrates that an in situ nanoprobing system is a powerful tool for enhancing p-well dopant contrast in a SEM, analyzing site-specific failures, and studying device physics under a dynamic scope.

Original languageEnglish
Article number5970080
Pages (from-to)1418-1420
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number10
DOIs
StatePublished - 1 Oct 2011

Keywords

  • Current mirror
  • laterally diffused p-channel metal-oxide-semiconductor (LDPMOS)
  • nanoprobing
  • secondary electron potential contrast (SEPC)

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