Insight of stress effect on the ONO stack layer in a SONOS-type flash memory cell

C. C. Yeh*, Y. Y. Liao, Ta-Hui Wang, W. J. Tsai, T. C. Lu, H. L. Kao, T. F. Ou, M. S. Chen, Y. J. Chen, E. K. Lai, Y. H. Shih, Wen Chi Ting, Y. H.Joseph Ku, Chih Yuan Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The stress effect on the ONO stack layer in a two-bit SONOS-type memory cell is investigated. Our results show that P/E cycles induced stress will generate extra nitride, oxide, and interface traps in the ONO stack layer. Besides, these stress created traps are unstable and will be annealed by additional thermal treatment. Storage electrons escape from stress-created nitride and oxide traps and the trap annealing effects are root causes of charge loss in a SONOS cell.

Original languageEnglish
Title of host publication2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Pages691-692
Number of pages2
DOIs
StatePublished - 1 Dec 2006
Event44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States
Duration: 26 Mar 200630 Mar 2006

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
CountryUnited States
CitySan Jose, CA
Period26/03/0630/03/06

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