Insight into the performance enhancement of double-gated polycrystalline silicon thin-film transistors with ultrathin channel

Zer Ming Lin*, Horng-Chih Lin, Wei Chen Chen, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

In this letter, characteristics of independently-controllable double-gated polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with ultrathin channel are characterized and analyzed experimentally and theoretically. As compared with the single-gated mode where only one of the gates is used for driving the device, 1.3-2.1 fold increase in drive current is achieved under double-gated mode as the two gates are biased simultaneously for driving the device. A remarkable lowering of barrier height 7-12 meV in the latter case due to the coupling of the two gate biases is identified as the major origin for such performance enhancement.

Original languageEnglish
Article number072108
JournalApplied Physics Letters
Volume96
Issue number7
DOIs
StatePublished - 1 Mar 2010

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