InSb P-N junction with avalanche breakdown behavior

S. L. Tu, Kai-Feng Huang, S. J. Yang

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

High quality InSb p-n junction is formed by Cd diffusion using a two temperature zone technique. The junction has a breakdown voltage of 14.4 V at 77 K, exceeding those of the state of art. I-V characteristics as a function of temperature are carefully studied. The reverse breakdown voltage of the p-n junction increases as the temperature is raised, indicating that the mechanism responsible for the breakdown is an avalanche, rather than a tunneling induced process. RA product of the diode is measured to be 1.2×106 Ω·cm2 at zero bias and remains fairly constant up to a reverse bias of 4 V.

Original languageEnglish
Pages (from-to)L1874-L1876
JournalJapanese Journal of Applied Physics
Volume28
Issue number11 A
DOIs
StatePublished - 1 Jan 1989

Keywords

  • Avalanche breakdown
  • InSb p-n junction

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