InP/InGaAs Heterojunction Bipolar Transistors Grown on Ge/P Co-implanted InP Substrates by Metal-organic Molecular Beam Epitaxy

W. J. Sung*, R. F. Kopf, D. J. Werder, C. T. Liu, Y. K. Chen, J. Chen, E. J. Zhu, Mau-Chung Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

InP/InGaAs Heterojunction Bipolar Transistors (HBTs) have demonstrated excellent high-frequency performance [1-4] and are widely used for optical fiber transmission [5-7]. However, the current mesa HBT structure utilizes a very thick, highly doped n+InGaAs layer for the subcollector contact. This added mesa height makes multi-level interconnection processes more difficult, which impedes the capability of fabricating compact integrated circuits. In addition, InP has a much higher thermal conductivity than InGaAs, so heat dissipation may be a problem for densely packed circuits with the above structure. This paper reports on InP/InGaAs HBTs grown on Ge/P co-implanted substrates by Metal-Organic Molecular Beam Epitaxy (MOMBE). This embedded subcollector HBT structure offers several advantages for the fabrication of large-scale integrated circuits on InP substrates.

Original languageEnglish
Title of host publicationProceedings IEEE Lester Eastman Conference on High Performance Devices
Pages245-247
Number of pages3
DOIs
StatePublished - 1 Dec 2002
EventProceedings IEEE Lester Eastman Conference on High Performance Devices - Newark, DE, United States
Duration: 6 Aug 20028 Aug 2002

Publication series

NameProceedings IEEE Lester Eastman Conference on High Performance Devices

Conference

ConferenceProceedings IEEE Lester Eastman Conference on High Performance Devices
CountryUnited States
CityNewark, DE
Period6/08/028/08/02

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    Sung, W. J., Kopf, R. F., Werder, D. J., Liu, C. T., Chen, Y. K., Chen, J., Zhu, E. J., & Chang, M-C. (2002). InP/InGaAs Heterojunction Bipolar Transistors Grown on Ge/P Co-implanted InP Substrates by Metal-organic Molecular Beam Epitaxy. In Proceedings IEEE Lester Eastman Conference on High Performance Devices (pp. 245-247). (Proceedings IEEE Lester Eastman Conference on High Performance Devices). https://doi.org/10.1109/LECHPD.2002.1146758