Ino.sCAlGai -x)o.sP high electron-mobility transistors (HEMT's) are expected to have higher two-dimensional electron gas density and larger current drive capability than both Alo.23Gao.77As and Ino.sGao.sP HEMT's due to the improved conduction-band offsets. In this paper, we performed a systematic investigation of the electrical properties of Ino.sCAlGai -x)o.sP (0 < x < 1) material system lattice matched to GaAs. By considering the conduction-band offset, direct-to-indirect-band electron transfer, donor-related deep levels, and Schottky barrier height, a relatively narrow range of the Al content 0.2 < x < 0.3 was found to be the optimum for the design of Ino.sCAlGai zki.sP HEMT's. Under 1.2-V operation, power transistors with the optimum aluminum composition show high drain current density, high transconductance, and excellent power-added efficiency (65.2% at 850 MHz). These results demonstrate that InAlGaP HEMT's are promising candidates for high-efficiency low-voltage power applications.
|Number of pages||9|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|State||Published - 1 Dec 1999|