Ino.5(Ala;Gai_a;)o.5P HEMT's for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

Yu Chi Wang; Jenn Ming Kuo; Fan Ren; James R. Lothian; Huan Shang Tsai; Joseph S. Weiner; Hao-Chung Kuo; Chun-Hsiung Lin; Young Kai Chen; William E. Mayo

doi:10.1109/22.780387

Ino.5(Ala;Gai_a;)o.5P HEMT's for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

Yu Chi Wang^*, Jenn Ming Kuo, Fan Ren, James R. Lothian, Huan Shang Tsai, Joseph S. Weiner, Hao-Chung Kuo, Chun-Hsiung Lin, Young Kai Chen, William E. Mayo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Ino.sCAlGai -x)o.sP high electron-mobility transistors (HEMT's) are expected to have higher two-dimensional electron gas density and larger current drive capability than both Alo.23Gao.77As and Ino.sGao.sP HEMT's due to the improved conduction-band offsets. In this paper, we performed a systematic investigation of the electrical properties of Ino.sCAlGai -x)o.sP (0 < x < 1) material system lattice matched to GaAs. By considering the conduction-band offset, direct-to-indirect-band electron transfer, donor-related deep levels, and Schottky barrier height, a relatively narrow range of the Al content 0.2 < x < 0.3 was found to be the optimum for the design of Ino.sCAlGai zki.sP HEMT's. Under 1.2-V operation, power transistors with the optimum aluminum composition show high drain current density, high transconductance, and excellent power-added efficiency (65.2% at 850 MHz). These results demonstrate that InAlGaP HEMT's are promising candidates for high-efficiency low-voltage power applications.

Original language	English
Pages (from-to)	1404-1412
Number of pages	9
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	47
Issue number	8
DOIs	https://doi.org/10.1109/22.780387
State	Published - 1 Dec 1999

Keywords

Gaas
HEMT
Inalgap

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Wang, Yu Chi ; Kuo, Jenn Ming ; Ren, Fan ; Lothian, James R. ; Tsai, Huan Shang ; Weiner, Joseph S. ; Kuo, Hao-Chung ; Lin, Chun-Hsiung ; Chen, Young Kai ; Mayo, William E. / Ino.5(Ala;Gai_a;)o.5P HEMT's for high-efficiency low-voltage power amplifiers : design, fabrication, and device results. In: IEEE Transactions on Microwave Theory and Techniques. 1999 ; Vol. 47, No. 8. pp. 1404-1412.

@article{0bf4be9544c6471cb271086f75760ff5,

title = "Ino.5(Ala;Gai_a;)o.5P HEMT's for high-efficiency low-voltage power amplifiers: design, fabrication, and device results",

abstract = "Ino.sCAlGai -x)o.sP high electron-mobility transistors (HEMT's) are expected to have higher two-dimensional electron gas density and larger current drive capability than both Alo.23Gao.77As and Ino.sGao.sP HEMT's due to the improved conduction-band offsets. In this paper, we performed a systematic investigation of the electrical properties of Ino.sCAlGai -x)o.sP (0 < x < 1) material system lattice matched to GaAs. By considering the conduction-band offset, direct-to-indirect-band electron transfer, donor-related deep levels, and Schottky barrier height, a relatively narrow range of the Al content 0.2 < x < 0.3 was found to be the optimum for the design of Ino.sCAlGai zki.sP HEMT's. Under 1.2-V operation, power transistors with the optimum aluminum composition show high drain current density, high transconductance, and excellent power-added efficiency (65.2% at 850 MHz). These results demonstrate that InAlGaP HEMT's are promising candidates for high-efficiency low-voltage power applications.",

keywords = "Gaas, HEMT, Inalgap",

author = "Wang, {Yu Chi} and Kuo, {Jenn Ming} and Fan Ren and Lothian, {James R.} and Tsai, {Huan Shang} and Weiner, {Joseph S.} and Hao-Chung Kuo and Chun-Hsiung Lin and Chen, {Young Kai} and Mayo, {William E.}",

year = "1999",

month = dec,

day = "1",

doi = "10.1109/22.780387",

language = "English",

volume = "47",

pages = "1404--1412",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

Ino.5(Ala;Gai_a;)o.5P HEMT's for high-efficiency low-voltage power amplifiers : design, fabrication, and device results. / Wang, Yu Chi; Kuo, Jenn Ming; Ren, Fan; Lothian, James R.; Tsai, Huan Shang; Weiner, Joseph S.; Kuo, Hao-Chung ; Lin, Chun-Hsiung; Chen, Young Kai; Mayo, William E.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 47, No. 8, 01.12.1999, p. 1404-1412.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Ino.5(Ala;Gai_a;)o.5P HEMT's for high-efficiency low-voltage power amplifiers

T2 - design, fabrication, and device results

AU - Wang, Yu Chi

AU - Kuo, Jenn Ming

AU - Ren, Fan

AU - Lothian, James R.

AU - Tsai, Huan Shang

AU - Weiner, Joseph S.

AU - Kuo, Hao-Chung

AU - Lin, Chun-Hsiung

AU - Chen, Young Kai

AU - Mayo, William E.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Ino.sCAlGai -x)o.sP high electron-mobility transistors (HEMT's) are expected to have higher two-dimensional electron gas density and larger current drive capability than both Alo.23Gao.77As and Ino.sGao.sP HEMT's due to the improved conduction-band offsets. In this paper, we performed a systematic investigation of the electrical properties of Ino.sCAlGai -x)o.sP (0 < x < 1) material system lattice matched to GaAs. By considering the conduction-band offset, direct-to-indirect-band electron transfer, donor-related deep levels, and Schottky barrier height, a relatively narrow range of the Al content 0.2 < x < 0.3 was found to be the optimum for the design of Ino.sCAlGai zki.sP HEMT's. Under 1.2-V operation, power transistors with the optimum aluminum composition show high drain current density, high transconductance, and excellent power-added efficiency (65.2% at 850 MHz). These results demonstrate that InAlGaP HEMT's are promising candidates for high-efficiency low-voltage power applications.

AB - Ino.sCAlGai -x)o.sP high electron-mobility transistors (HEMT's) are expected to have higher two-dimensional electron gas density and larger current drive capability than both Alo.23Gao.77As and Ino.sGao.sP HEMT's due to the improved conduction-band offsets. In this paper, we performed a systematic investigation of the electrical properties of Ino.sCAlGai -x)o.sP (0 < x < 1) material system lattice matched to GaAs. By considering the conduction-band offset, direct-to-indirect-band electron transfer, donor-related deep levels, and Schottky barrier height, a relatively narrow range of the Al content 0.2 < x < 0.3 was found to be the optimum for the design of Ino.sCAlGai zki.sP HEMT's. Under 1.2-V operation, power transistors with the optimum aluminum composition show high drain current density, high transconductance, and excellent power-added efficiency (65.2% at 850 MHz). These results demonstrate that InAlGaP HEMT's are promising candidates for high-efficiency low-voltage power applications.

KW - Gaas

KW - HEMT

KW - Inalgap

UR - http://www.scopus.com/inward/record.url?scp=0032649197&partnerID=8YFLogxK

U2 - 10.1109/22.780387

DO - 10.1109/22.780387

M3 - Article

AN - SCOPUS:0032649197

VL - 47

SP - 1404

EP - 1412

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 8

ER -