Ino.5(Ala;Gai_a;)o.5P HEMT's for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

Yu Chi Wang*, Jenn Ming Kuo, Fan Ren, James R. Lothian, Huan Shang Tsai, Joseph S. Weiner, Hao-Chung Kuo, Chun-Hsiung Lin, Young Kai Chen, William E. Mayo

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

Ino.sCAlGai -x)o.sP high electron-mobility transistors (HEMT's) are expected to have higher two-dimensional electron gas density and larger current drive capability than both Alo.23Gao.77As and Ino.sGao.sP HEMT's due to the improved conduction-band offsets. In this paper, we performed a systematic investigation of the electrical properties of Ino.sCAlGai -x)o.sP (0 < x < 1) material system lattice matched to GaAs. By considering the conduction-band offset, direct-to-indirect-band electron transfer, donor-related deep levels, and Schottky barrier height, a relatively narrow range of the Al content 0.2 < x < 0.3 was found to be the optimum for the design of Ino.sCAlGai zki.sP HEMT's. Under 1.2-V operation, power transistors with the optimum aluminum composition show high drain current density, high transconductance, and excellent power-added efficiency (65.2% at 850 MHz). These results demonstrate that InAlGaP HEMT's are promising candidates for high-efficiency low-voltage power applications.

Original languageEnglish
Pages (from-to)1404-1412
Number of pages9
JournalIEEE Transactions on Microwave Theory and Techniques
Volume47
Issue number8
DOIs
StatePublished - 1 Dec 1999

Keywords

  • Gaas
  • HEMT
  • Inalgap

Fingerprint Dive into the research topics of 'Ino.5(Ala;Gai_a;)o.5P HEMT's for high-efficiency low-voltage power amplifiers: design, fabrication, and device results'. Together they form a unique fingerprint.

  • Cite this