Abstract
Ino.sCAlGai -x)o.sP high electron-mobility transistors (HEMT's) are expected to have higher two-dimensional electron gas density and larger current drive capability than both Alo.23Gao.77As and Ino.sGao.sP HEMT's due to the improved conduction-band offsets. In this paper, we performed a systematic investigation of the electrical properties of Ino.sCAlGai -x)o.sP (0 < x < 1) material system lattice matched to GaAs. By considering the conduction-band offset, direct-to-indirect-band electron transfer, donor-related deep levels, and Schottky barrier height, a relatively narrow range of the Al content 0.2 < x < 0.3 was found to be the optimum for the design of Ino.sCAlGai zki.sP HEMT's. Under 1.2-V operation, power transistors with the optimum aluminum composition show high drain current density, high transconductance, and excellent power-added efficiency (65.2% at 850 MHz). These results demonstrate that InAlGaP HEMT's are promising candidates for high-efficiency low-voltage power applications.
Original language | English |
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Pages (from-to) | 1404-1412 |
Number of pages | 9 |
Journal | IEEE Transactions on Microwave Theory and Techniques |
Volume | 47 |
Issue number | 8 |
DOIs | |
State | Published - 1 Dec 1999 |
Keywords
- Gaas
- HEMT
- Inalgap