InN-based heterojunction photodetector with extended infrared response

Lung Hsing Hsu, Chien Ting Kuo, Jhih Kai Huang, Shun Chieh Hsu, Hsin Ying Lee, Hao-Chung Kuo, Po-Tsung Lee, Yu Lin Tsai, Yi Chia Hwang, Chen Feng Su, Jr Hau He, Shih Yen Lin, Yuh Jen Cheng, Chien-Chung Lin

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

Original languageEnglish
Pages (from-to)31150-31162
Number of pages13
JournalOptics Express
Volume23
Issue number24
DOIs
StatePublished - 30 Nov 2015

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    Hsu, L. H., Kuo, C. T., Huang, J. K., Hsu, S. C., Lee, H. Y., Kuo, H-C., Lee, P-T., Tsai, Y. L., Hwang, Y. C., Su, C. F., He, J. H., Lin, S. Y., Cheng, Y. J., & Lin, C-C. (2015). InN-based heterojunction photodetector with extended infrared response. Optics Express, 23(24), 31150-31162. https://doi.org/10.1364/OE.23.031150