Injection-locked GaInP/GaAs HBT frequency divider with stacked transformers

Hung Ju Wei, Chin-Chun Meng*, Yuwen Chang, Guo Wei Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The first integrated GaInP/GaAs heterojunction bipolar transistor (HBT) injection-locked frequency divider (ILFD) with the stacked transformers is demonstrated around 10 GHz. The stacked transformers formed by only two metal layers provide the inductive coupling in the cross feedback and separate biasing for base and collector to allow for the larger output swing in the LC tank and obtaining wide locking range. Under the supply voltage of 5 V and core power consumption of 20.5 mW, the locking range is 7.8% of the center operating frequency. The chip size of the entire ILFD including probing pads is 1.0 × 1.0 mm2.

Original languageEnglish
Pages (from-to)2602-2605
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume49
Issue number10
DOIs
StatePublished - 1 Oct 2007

Keywords

  • GaInP/GaAs
  • Heterojunction bipolar transistor
  • Injection-locked frequency divider (ILFD)
  • Stacked transformer

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