Initial stages of ultra thin Ti film growth on Si(1 1 1)-7 × 7 surface

H. F. Hsu, Ming-Chang Lu, C. K. Fang, L. J. Chen*, H. L. Hsiao, T. W. Pi

*Corresponding author for this work

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

Initial stages of Ti adsorption up to coverage of ∼3 monolayers (ML) on the Si (1 1 1)-7 × 7 surface at room temperature have been studied by synchrotron-radiation ultraviolet photoemission spectroscopy, scanning tunneling microscopy and low-energy electron diffraction. At very low coverage (≤ 0.02 ML) the individual Ti atoms adsorbed on the Si rest atom sites. At higher coverage (∼0.04 ML) the discrete adatoms are no longer distinct and show a fuzzy appearance indicating the interactions of Ti atoms with Si adatoms. For coverage greater than 0.24 ML, the Si atoms start to mix with the Ti atoms to form an intermixed Ti/Si film and the 7 × 7 reconstruction is destroyed gradually. The reconstruction is removed completely at 1 ML Ti deposition.

Original languageEnglish
Pages (from-to)133-138
Number of pages6
JournalThin Solid Films
Volume428
Issue number1-2
DOIs
StatePublished - 20 Mar 2003
EventProceedings of Symposium J on Growth and Evolution - Strasbourg, France
Duration: 18 Jun 200221 Jun 2002

Keywords

  • Scanning tunneling microscopy
  • Ti on Si (1 1 1)
  • Ultraviolet photoemission spectroscopy

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    Hsu, H. F., Lu, M-C., Fang, C. K., Chen, L. J., Hsiao, H. L., & Pi, T. W. (2003). Initial stages of ultra thin Ti film growth on Si(1 1 1)-7 × 7 surface. Thin Solid Films, 428(1-2), 133-138. https://doi.org/10.1016/S0040-6090(02)01239-7