Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)- √3×√3 surface

Agnieszka Tomaszewska*, Xiao Lan Huang, Chun-Liang Lin, Kuo Wei Chang, Tsu Yi Fu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Using STM, we have investigated early stages of nanostructures formation upon room temperature (RT) deposition of 0.12 ML Ni onto Ag/Ge(111)- √3×√3 surface. While RT growth mode is determined by cluster formation, annealing up to 200°C promotes cluster nucleation. Further annealing results in creation of hexagonal-shaped islands which conserve on the surface in the unchanged form even after 800°C annealing. Unusual thermal stability of these islands is explained in terms of Ni-Ge compounds formation.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 26 Sep 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • Ag
  • Ge(111)
  • island growth
  • Ni
  • STM

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