Initial-on BSD protection design with PMO S-triggered SCR device

Ming Dou Ker*, Shih Hung Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A novel SCR design with "initial-on" function is proposed to achieve the lowest trigger voltage and the fastest turn-on speed of SCR device for effective on-chip ESD protection. Without using the special native device or any process modification, this initial-on design is implemented by PMOS-triggered SCR device, which can be realized in general CMOS processes. This initial-on SCR design also presents a high enough holding voltage to avoid latchup issue. The new proposed initial-on ESD protection design with PMOS-triggered SCR device has been successfully verified in a 0.25-μm CMOS process.

Original languageEnglish
Title of host publication2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005
PublisherIEEE Computer Society
Pages105-108
Number of pages4
ISBN (Print)0780391624, 9780780391628
DOIs
StatePublished - 1 Jan 2005
Event1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005 - Hsinchu, Taiwan
Duration: 1 Nov 20053 Nov 2005

Publication series

Name2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005

Conference

Conference1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005
CountryTaiwan
CityHsinchu
Period1/11/053/11/05

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