InGaP/InGaAs PHEMT with high IP3 for low noise applications

Y. C. Lin*, Edward Yi Chang, G. J. Chen, H. M. Lee, G. W. Huang, D. Biswas, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IP3 was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity.

Original languageEnglish
Pages (from-to)777-778
Number of pages2
JournalElectronics Letters
Volume40
Issue number12
DOIs
StatePublished - 10 Jun 2004

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