InGaP/GaAs dual-junction solar cell with AlGaAs/GaAs tunnel diode grown on 10° off misoriented GaAs substrate

Hung Wei Yu*, Chen Chen Chung, Chin Te Wang, Hong Quan Nguyen, Binh Tinh Tran, Kung Liang Lin, Chang Fu Dee, Burhanuddin Yeop Majlis, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

InGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is demonstrated that the solar cells with P ++-AlGaAs/N ++-GaAs TDs grown on 10° off GaAs substrates not only show a higher external quantum efficiency (EQE) but also generate a higher peak current density (J peak) at higher concentration ratios (185°) than the solar cells with P ++-GaAs/N ++-InGaP TDs grown on 6° off GaAs substrates. Furthermore, the cell design with P ++-AlGaAs/N ++-GaAs TDs grown on 10° off GaAs substrates does not generate a disordered InGaP epitaxial layer during material growth, and thus shows superior current-voltage characteristics.

Original languageEnglish
Article number080208
JournalJapanese Journal of Applied Physics
Volume51
Issue number8 PART 1
DOIs
StatePublished - 1 Aug 2012

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