InGaN/GaN tunnel-injection blue light-emitting diodes

T. C. Wen*, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai, Cheng-Huang Kuo, C. H. Chen, J. K. Sheu, J. F. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

56 Scopus citations

Abstract

A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In0.18Ga0.82N electron emitter layer, we could increase the LED output intensity from 28.3 minicandela (mcd) to 43.2 mcd (i.e., a 53% increase). However, a further increase in electron emitter layer thickness will reduce the intensity due to relaxation. It was also found that we could decrease the 20 mA forward voltage from 4.16 V to 3.58 V with a proper electron emitter layer.

Original languageEnglish
Pages (from-to)1093-1095
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume49
Issue number6
DOIs
StatePublished - 1 Jun 2002

Keywords

  • Charge asymmetric resonance tunneling (CART)
  • InGaN/GaN
  • Light-emitting diode (LED)
  • MOCVD
  • Multiquantum well (MQW)

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