InGaN/GaN MQW nanorods LED fabricated by ICP-RIE and PEC oxidation processes

Fang I. Lai*, H. W. Huang, Ching Hua Chiu, C. F. Lai, Tien-Chang Lu, Hao-Chung Kuo, S. C. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The InGaN/GaN nanorods LED was successfully fabricated by ICP-RIE and PEC processes. Compared with as-grown sample, the PL and EL peak-wavelengths of the nanorods with PEC show 8.6 and 10.5 nm blue-shift, respectively.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2007
PublisherOptical Society of America
ISBN (Print)9781557528346
DOIs
StatePublished - 1 Dec 2007
EventConference on Lasers and Electro-Optics, CLEO 2007 - Baltimore, MD, United States
Duration: 6 May 20076 May 2007

Publication series

NameConference on Lasers and Electro-Optics, 2007, CLEO 2007

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2007
CountryUnited States
CityBaltimore, MD
Period6/05/076/05/07

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