InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers

C. H. Liu, R. W. Chuang, S. J. Chang*, Y. K. Su, Cheng-Huang Kuo, J. M. Tsai, C. C. Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). It was found that there exist many nanometer-sized holes on the surface of SiN buffer layers, and such porous SiN layers probably could enhance the lateral growth. Furthermore, it was found that we could use the GaN/SiN double buffer to achieve more reliable nitride-based LEDs.

Original languageEnglish
Pages (from-to)214-217
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume111
Issue number2-3
DOIs
StatePublished - 25 Aug 2004

Keywords

  • AFM
  • Buffer
  • LED
  • Life time
  • SiN
  • TEM

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