InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates

Y. P. Hsu*, S. J. Chang, Y. K. Su, C. S. Chang, S. C. Shei, Y. C. Lin, Cheng-Huang Kuo, L. W. Wu, S. C. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Nitride-based light-emitting diodes (LEDs) with a reflector at the backside of the sapphire substrates have been demonstrated. It was found that an SiO2/TiO2 distributed-Bragg reflector (DBR) structure could reflect more downward-emitting photons than an Al-mirror layer. It was also found that the 20-mA output power was 2.76 mW, 2.65 mW, and 2.45 mW for the DBR LED, Al-reflector LED, and conventional LED, respectively. With the same 50-mA current injection, the integrated-electroluminescence (EL) intensity of a DBR LED and an Al-reflector LED was 19% and 15% larger than that observed from a conventional LED.

Original languageEnglish
Pages (from-to)403-406
Number of pages4
JournalJournal of Electronic Materials
Volume32
Issue number5
DOIs
StatePublished - 1 Jan 2003

Keywords

  • DBR
  • InGaN/GaN
  • LED
  • Metal reflector

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