InGaN/GaN light emitting diodes activated in O2 ambient

Cheng-Huang Kuo*, S. J. Chang, Y. K. Su, J. F. Chen, L. W. Wu, J. K. Sheu, C. H. Chen, G. C. Chi

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

55 Scopus citations

Abstract

Mg-doped GaN epitaxial layers were annealed in pure O2 and pure N2. It was found that we could achieve a low-resistive p-type GaN by pure O2 annealing at a temperature as low as 400°C. With a 500°C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O2 were both smaller than those values observed from InGaN/GaN LED annealed in pure N2. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.

Original languageEnglish
Pages (from-to)240-242
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number5
DOIs
StatePublished - 1 May 2002

Keywords

  • InGaN/GaN
  • LED
  • Mg activation
  • Oxygen annealing

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