InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

L. W. Wu*, S. J. Chang, Y. K. Su, T. Y. Tsai, T. C. Wen, Cheng-Huang Kuo, W. C. Lai, J. K. Sheu, J. M. Tsai, S. C. Chen, B. R. Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Nitride-based light-emitting diodes (LEDs) with Si-doped n--In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 × 10-2 Ω-cm2 for samples with an SPS tunneling contact layer, the measured specific-contact resistance is around 1.5 × 100 Ω-cm2 for samples without an SPS tunneling contact layer. Furthermore, it was found that one could lower the LED-operation voltage from 3.75 V to 3.4 V by introducing the SPS structure. It was also found that the LED-operation voltage is almost independent of the CP2Mg flow rate when we grow the underneath p-type GaN layer. The LED-output intensity was also found to be larger for samples with the SPS structure.

Original languageEnglish
Pages (from-to)411-414
Number of pages4
JournalJournal of Electronic Materials
Volume32
Issue number5
DOIs
StatePublished - 1 Jan 2003

Keywords

  • InGaN/GaN
  • Light-emitting diode (LED)
  • Multiple-quantum well (MQW)
  • Short-period superlattice (SPS)

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    Wu, L. W., Chang, S. J., Su, Y. K., Tsai, T. Y., Wen, T. C., Kuo, C-H., Lai, W. C., Sheu, J. K., Tsai, J. M., Chen, S. C., & Huang, B. R. (2003). InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer. Journal of Electronic Materials, 32(5), 411-414. https://doi.org/10.1007/s11664-003-0168-1