InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption

H. H. Yao, Tien-chang Lu, G. S. Huang, C. Y. Chen, W. D. Liang, Hao-Chung Kuo, S. C. Wang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

Self-assembled InGaN quantum dots (QDs) were grown by metal-organic chemical vapour deposition with growth interruption at low V/III ratio and low growth temperature on sapphire substrates. The effects of the interruption time on the morphological and optical properties of InGaN QDs were studied. The results show that the growth interruption can modify the dimension and distribution of InGaN QDs, and cause the QD emission wavelength to blue shift with increasing interruption time. A density of InGaN QDs of about 4.5 × 10 10 cm -2 with an average lateral size of 11.5nm and an average height of 1.6nm can be obtained by using a growth interruption time of 60s.

Original languageEnglish
Pages (from-to)1713-1716
Number of pages4
JournalNanotechnology
Volume17
Issue number6
DOIs
StatePublished - 28 Mar 2006

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