InGaN LEDs grown on patterned sapphire substrates with modified top-tip cone shapes

Hsu Hung Hsueh, Sin Liang Ou, Chiao Yang Cheng, Dong Sing Wuu, Ray-Hua Horng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The GaN-based light emitting diodes (LEDs) were grown on the cone-shaped patterned sapphire substrates (PSSs) by metal-organic chemical vapor deposition. To enhance the epilayer quality and optoelectronic performance of LEDs, the PSSs were further wet etched to form the modified top-tip cone shapes. After the wet etching process, some dry-etched induced damage on sapphire surface generated in the PSS fabrication process could be removed, leading to a higher crystal quality in epilayer and better device performance. As the wet etching time was increased to 3 min, the LED grown on the cone-shaped PSS had 53% and 8% improvement in light output (@ 20 mA) compared to that on conventional sapphire substrate (CSS) and the cone-shaped PSS without wet etching, respectively. It indicates that the technique of the modification in PSS shape has a high potential in LEDs application.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 14
Pages101-106
Number of pages6
Edition2
DOIs
StatePublished - 21 Oct 2013
EventWide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting - Toronto, ON, Canada
Duration: 12 May 201316 May 2013

Publication series

NameECS Transactions
Number2
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceWide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period12/05/1316/05/13

Fingerprint Dive into the research topics of 'InGaN LEDs grown on patterned sapphire substrates with modified top-tip cone shapes'. Together they form a unique fingerprint.

  • Cite this

    Hsueh, H. H., Ou, S. L., Cheng, C. Y., Wuu, D. S., & Horng, R-H. (2013). InGaN LEDs grown on patterned sapphire substrates with modified top-tip cone shapes. In Wide-Bandgap Semiconductor Materials and Devices 14 (2 ed., pp. 101-106). (ECS Transactions; Vol. 53, No. 2). https://doi.org/10.1149/05302.0101ecst