InGaN LED fabricated on Eco-GaN template with a Ga2O3 sacrificial layer for chemical lift-off application

Hsu Hung Hsueh, Sin Liang Ou, Dong Sing Wuu, Ray-Hua Horng*

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

In this study, a nitride light-emitting diode (LED) with an electroplated Cu substrate was detached from a GaN/sapphire (Eco-GaN) template by chemical lift-off (CLO) using a Ga2O3 sacrificial layer. To etch the Ga2O3 sacrificial layer, HF solution was used. In addition, a highly lateral etching rate of 70 μm/h was obtained as the etching treatment was performed. In comparison to the LED device before the CLO process, the vertical-type LED fabricated on the Cu substrate possessed a higher output power of 187 mW, at an injection current of 350 mA. From our evaluation, the output power of LED/Cu substrate had 46% enhancement as compared with that before the CLO process. It reveals that good optoelectronic performance of the LED device on Cu substrate is achieved through the CLO process. Additionally, the separated Eco-GaN template can be re-used, showing high potential in cost-effective LED fabrication.

Original languageEnglish
Pages (from-to)8-12
Number of pages5
JournalVacuum
Volume118
DOIs
StatePublished - 1 Aug 2015

Keywords

  • Chemical lift-off
  • Eco-GaN template
  • GaO sacrificial layer
  • Light-emitting diodes

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