InGaN-GaN MQW LEDs with Si treatment

Y. P. Hsu*, S. J. Chang, Y. K. Su, S. C. Chen, J. M. Tsai, W. C. Lai, Cheng-Huang Kuo, C. S. Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

28 Scopus citations

Abstract

Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Six Ny layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.

Original languageEnglish
Pages (from-to)1620-1622
Number of pages3
JournalIEEE Photonics Technology Letters
Volume17
Issue number8
DOIs
StatePublished - 1 Aug 2005

Keywords

  • InGaN-GaN
  • Light-emitting diode (LED)
  • Multi-quantum well (MQW)
  • Si treatment
  • Surface roughness

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  • Cite this

    Hsu, Y. P., Chang, S. J., Su, Y. K., Chen, S. C., Tsai, J. M., Lai, W. C., Kuo, C-H., & Chang, C. S. (2005). InGaN-GaN MQW LEDs with Si treatment. IEEE Photonics Technology Letters, 17(8), 1620-1622. https://doi.org/10.1109/LPT.2005.851989