InGaN-based light-emitting diodes grown on grooved sapphire substrates

Wei Kai Wang, Don Sing Wuu*, Shu Hei Lin, Shih Yung Huang, Ray-Hua Horng

*Corresponding author for this work

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

We investigate the microstructure and electrical properties of the InGaN-based light-emitting diodes (LEDs) fabricated onto patterned sapphire substrates (PSSs) with parallel grooves. The PSS with parallel grooves (ridge: 3 urn; trench: 2 μm) along the (11-20) direction were etched using an inductively-coupledplasma etcher with different etching depths. It was found that the threading dislocation density in the GaN epilayer can be effectively reduced by the present PSS technique as indicated from the transmission- electron-microscopy result. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were measured to be 7.1 mW and 10.1%, respectively. The achieved improvement of the output power is not only due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, but also due to the enhancement of the extraction efficiency using the PSS.

Original languageEnglish
Pages (from-to)2141-2144
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
StatePublished - 31 Jul 2006
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 28 Aug 20052 Sep 2005

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