InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers

A. Li, S. C. Liu, Kuan-Wei Su, Y. L. Liao, S. C. Huang, Yung-Fu Chen*, Kai-Feng Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3μm laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06μm. With an incident pump power of 1.8W, an average output power of 160mW with a Q-switched pulse width of 19ns at a pulse repetition rate of 38kHz was obtained.

Original languageEnglish
Pages (from-to)429-431
Number of pages3
JournalApplied Physics B: Lasers and Optics
Volume84
Issue number3
DOIs
StatePublished - 1 Sep 2006

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