InGaAs sub-monolayer quantum dots VCSEL with extremely temperature insensitivity for 2.125 Gb/s application

Fang I. Lai*, Hao-Chung Kuo, H. W. Huang, S. C. Wang, G. R. Lin, J. Chi, N. A. Maleev, S. A. Blokhin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, CLEO
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)1424409306, 9781424409303
DOIs
StatePublished - 1 Dec 2007
Event2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, CLEO - Munich, Germany
Duration: 17 Jun 200722 Jun 2007

Publication series

NameConference on Lasers and Electro-Optics Europe - Technical Digest

Conference

Conference2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, CLEO
CountryGermany
CityMunich
Period17/06/0722/06/07

Cite this

Lai, F. I., Kuo, H-C., Huang, H. W., Wang, S. C., Lin, G. R., Chi, J., Maleev, N. A., & Blokhin, S. A. (2007). InGaAs sub-monolayer quantum dots VCSEL with extremely temperature insensitivity for 2.125 Gb/s application. In 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, CLEO [4385952] (Conference on Lasers and Electro-Optics Europe - Technical Digest). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOE-IQEC.2007.4385952