Abstract
In this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an in-situ NH3 post remote-plasma (PRP) treatment onto InGaAs quantum-well MOSFETs with Ti/HfO2/InGaAs gate stack. Transistors with gate lengths down to 80 nm have been fabricated and characterized. Due to the excellent interfacial quality of HfO2/AlN/InGaAs, the subthreshold swing and the peak effective channel mobility have been improved to 93 mV/decade and 4253 cm2/Vs, respectively. The drain current has also shown a 4.6-fold enhancement, to 164mA/mm(IOFF = 100 nA/μmandV DD =0.5V),compared with the HfO2 control device. The results also show that the HfO2/AlN device exhibits better immunity to short-channel effects (SCEs) than the HfO2 control device. Furthermore, during positive bias temperature instability stress, a smaller VTH and a lower Gm were observed for the sample with an AlN IPL and NH3 PRP treatment, indicating that it is more reliable than the sample without any IPL or plasma treatment.
Original language | English |
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Article number | 7828073 |
Pages (from-to) | 310-313 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 38 |
Issue number | 3 |
DOIs | |
State | Published - 1 Mar 2017 |
Keywords
- AlN
- high-κ dielectric
- interfacial passivation layer (IPL)
- NH plasma treatment
- plasma-enhanced atomic layer deposition (PEALD)
- Quantum-well MOSFET (QW-MOSFET)