InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment

Po Chun Chang; Quang Ho Luc; Yueh Chin Lin; Yen Ku Lin; Chia Hsun Wu; Simon M. Sze; Edward Yi Chang

doi:10.1109/LED.2017.2656180

InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH₃ Post Remote-Plasma Treatment

Po Chun Chang, Quang Ho Luc, Yueh Chin Lin, Yen Ku Lin, Chia Hsun Wu, Simon M. Sze, Edward Yi Chang^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an in-situ NH₃ post remote-plasma (PRP) treatment onto InGaAs quantum-well MOSFETs with Ti/HfO₂/InGaAs gate stack. Transistors with gate lengths down to 80 nm have been fabricated and characterized. Due to the excellent interfacial quality of HfO₂/AlN/InGaAs, the subthreshold swing and the peak effective channel mobility have been improved to 93 mV/decade and 4253 cm²/Vs, respectively. The drain current has also shown a 4.6-fold enhancement, to 164mA/mm(I_OFF = 100 nA/μmandV _DD =0.5V),compared with the HfO₂ control device. The results also show that the HfO₂/AlN device exhibits better immunity to short-channel effects (SCEs) than the HfO₂ control device. Furthermore, during positive bias temperature instability stress, a smaller VTH and a lower G_m were observed for the sample with an AlN IPL and NH₃ PRP treatment, indicating that it is more reliable than the sample without any IPL or plasma treatment.

Original language	English
Article number	7828073
Pages (from-to)	310-313
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	3
DOIs	https://doi.org/10.1109/LED.2017.2656180
State	Published - 1 Mar 2017

Keywords

AlN
high-κ dielectric
interfacial passivation layer (IPL)
NH plasma treatment
plasma-enhanced atomic layer deposition (PEALD)
Quantum-well MOSFET (QW-MOSFET)

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@article{e4bfa21e90aa4649a221850d7ed23cac,

title = "InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment",

abstract = "In this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an in-situ NH3 post remote-plasma (PRP) treatment onto InGaAs quantum-well MOSFETs with Ti/HfO2/InGaAs gate stack. Transistors with gate lengths down to 80 nm have been fabricated and characterized. Due to the excellent interfacial quality of HfO2/AlN/InGaAs, the subthreshold swing and the peak effective channel mobility have been improved to 93 mV/decade and 4253 cm2/Vs, respectively. The drain current has also shown a 4.6-fold enhancement, to 164mA/mm(IOFF = 100 nA/μmandV DD =0.5V),compared with the HfO2 control device. The results also show that the HfO2/AlN device exhibits better immunity to short-channel effects (SCEs) than the HfO2 control device. Furthermore, during positive bias temperature instability stress, a smaller VTH and a lower Gm were observed for the sample with an AlN IPL and NH3 PRP treatment, indicating that it is more reliable than the sample without any IPL or plasma treatment.",

keywords = "AlN, high-κ dielectric, interfacial passivation layer (IPL), NH plasma treatment, plasma-enhanced atomic layer deposition (PEALD), Quantum-well MOSFET (QW-MOSFET)",

author = "Chang, {Po Chun} and Luc, {Quang Ho} and Lin, {Yueh Chin} and Lin, {Yen Ku} and Wu, {Chia Hsun} and Sze, {Simon M.} and Chang, {Edward Yi}",

year = "2017",

month = mar,

day = "1",

doi = "10.1109/LED.2017.2656180",

language = "English",

volume = "38",

pages = "310--313",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH₃ Post Remote-Plasma Treatment. / Chang, Po Chun; Luc, Quang Ho; Lin, Yueh Chin; Lin, Yen Ku; Wu, Chia Hsun; Sze, Simon M.; Chang, Edward Yi.

In: IEEE Electron Device Letters, Vol. 38, No. 3, 7828073, 01.03.2017, p. 310-313.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment

AU - Chang, Po Chun

AU - Luc, Quang Ho

AU - Lin, Yueh Chin

AU - Lin, Yen Ku

AU - Wu, Chia Hsun

AU - Sze, Simon M.

AU - Chang, Edward Yi

PY - 2017/3/1

Y1 - 2017/3/1

N2 - In this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an in-situ NH3 post remote-plasma (PRP) treatment onto InGaAs quantum-well MOSFETs with Ti/HfO2/InGaAs gate stack. Transistors with gate lengths down to 80 nm have been fabricated and characterized. Due to the excellent interfacial quality of HfO2/AlN/InGaAs, the subthreshold swing and the peak effective channel mobility have been improved to 93 mV/decade and 4253 cm2/Vs, respectively. The drain current has also shown a 4.6-fold enhancement, to 164mA/mm(IOFF = 100 nA/μmandV DD =0.5V),compared with the HfO2 control device. The results also show that the HfO2/AlN device exhibits better immunity to short-channel effects (SCEs) than the HfO2 control device. Furthermore, during positive bias temperature instability stress, a smaller VTH and a lower Gm were observed for the sample with an AlN IPL and NH3 PRP treatment, indicating that it is more reliable than the sample without any IPL or plasma treatment.

AB - In this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an in-situ NH3 post remote-plasma (PRP) treatment onto InGaAs quantum-well MOSFETs with Ti/HfO2/InGaAs gate stack. Transistors with gate lengths down to 80 nm have been fabricated and characterized. Due to the excellent interfacial quality of HfO2/AlN/InGaAs, the subthreshold swing and the peak effective channel mobility have been improved to 93 mV/decade and 4253 cm2/Vs, respectively. The drain current has also shown a 4.6-fold enhancement, to 164mA/mm(IOFF = 100 nA/μmandV DD =0.5V),compared with the HfO2 control device. The results also show that the HfO2/AlN device exhibits better immunity to short-channel effects (SCEs) than the HfO2 control device. Furthermore, during positive bias temperature instability stress, a smaller VTH and a lower Gm were observed for the sample with an AlN IPL and NH3 PRP treatment, indicating that it is more reliable than the sample without any IPL or plasma treatment.

KW - AlN

KW - high-κ dielectric

KW - interfacial passivation layer (IPL)

KW - NH plasma treatment

KW - plasma-enhanced atomic layer deposition (PEALD)

KW - Quantum-well MOSFET (QW-MOSFET)

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U2 - 10.1109/LED.2017.2656180

DO - 10.1109/LED.2017.2656180

M3 - Article

AN - SCOPUS:85014049418

VL - 38

SP - 310

EP - 313

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 3

M1 - 7828073