InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment

Po Chun Chang, Quang Ho Luc, Yueh Chin Lin, Yen Ku Lin, Chia Hsun Wu, Simon M. Sze, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

In this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an in-situ NH3 post remote-plasma (PRP) treatment onto InGaAs quantum-well MOSFETs with Ti/HfO2/InGaAs gate stack. Transistors with gate lengths down to 80 nm have been fabricated and characterized. Due to the excellent interfacial quality of HfO2/AlN/InGaAs, the subthreshold swing and the peak effective channel mobility have been improved to 93 mV/decade and 4253 cm2/Vs, respectively. The drain current has also shown a 4.6-fold enhancement, to 164mA/mm(IOFF = 100 nA/μmandV DD =0.5V),compared with the HfO2 control device. The results also show that the HfO2/AlN device exhibits better immunity to short-channel effects (SCEs) than the HfO2 control device. Furthermore, during positive bias temperature instability stress, a smaller VTH and a lower Gm were observed for the sample with an AlN IPL and NH3 PRP treatment, indicating that it is more reliable than the sample without any IPL or plasma treatment.

Original languageEnglish
Article number7828073
Pages (from-to)310-313
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number3
DOIs
StatePublished - 1 Mar 2017

Keywords

  • AlN
  • high-κ dielectric
  • interfacial passivation layer (IPL)
  • NH plasma treatment
  • plasma-enhanced atomic layer deposition (PEALD)
  • Quantum-well MOSFET (QW-MOSFET)

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