InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm

J. Y. Huang, H. C. Liang, Kuan-Wei Su, H. C. Lai, Yung-Fu Chen*, Kai-Feng Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained.

Original languageEnglish
Pages (from-to)239-242
Number of pages4
JournalApplied Optics
Volume46
Issue number2
DOIs
StatePublished - 10 Jan 2007

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