InGaAs Junctionless FinFETs with Self-Aligned Ni-InGaAs S/D

Po Chun Chang, Chih Jen Hsiao, Franky Juanda Lumbantoruan, Chia Hsun Wu, Yen Ku Lin, Yueh Chin Lin, Simon M. Sze, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with Wfin down to 20 nm, EOT of 2.1 nm, and LG = 60 nm shows high ION = 188 μA μ m at VDD = 0.5 V and IOFF = 100 nA μ m, ION/IOFF = 5 × 105, DIBL = 106 mV/V and SS = 96 mV/dec. The device also exhibits a decent extrinsic transconductance (Gm) of 1142 μS μm at VDS of 0.5 V. This high performance is attributed to the moderate doping concentration to ensure the channel carriers could be effectively depleted and the low RSD$ realized by self-aligned Ni-InGaAs alloy S/D. Furthermore, we also examine the temperature dependence of the main electrical parameters of the JL transistor.

Original languageEnglish
Article number8419250
Pages (from-to)856-860
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume6
DOIs
StatePublished - 1 Jan 2018

Keywords

  • FinFET
  • InGaAs nMOSFETs
  • Junctionless (JL) transistor
  • Ni-InGaAs
  • high-k dielectric
  • metal source/drain

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