InGaAs FinFET modeling using industry standard compact model BSIM-CMG

S. Khandelwal; J. P. Duarte; N. Paydavosi; Y. S. Chauhan; J. J. Gu; M. Si; P. D. Ye; Chen-Ming Hu

InGaAs FinFET modeling using industry standard compact model BSIM-CMG

S. Khandelwal, J. P. Duarte, N. Paydavosi, Y. S. Chauhan, J. J. Gu, M. Si, P. D. Ye, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen in carrier mobility behavior of InGaAs FinFETs compared to silicon devices can be accounted for in the model. Furthermore, the calibrated model is used for performance projection in these devices. It is found that parasitic resistance and mobility reduction with vertical field limit the performance of these devices.

Original language	English
Title of host publication	Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
Publisher	Nano Science and Technology Institute
Pages	475-478
Number of pages	4
ISBN (Print)	9781482258271
State	Published - 1 Jan 2014
Event	Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 - Washington, DC, United States Duration: 15 Jun 2014 → 18 Jun 2014

Publication series

Name	Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
Volume	2

Conference

Conference	Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
Country	United States
City	Washington, DC
Period	15/06/14 → 18/06/14

Keywords

BSIM-CMG
Compact models
InGaAs FinFETs

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Khandelwal, S., Duarte, J. P., Paydavosi, N., Chauhan, Y. S., Gu, J. J., Si, M., Ye, P. D., & Hu, C-M. (2014). InGaAs FinFET modeling using industry standard compact model BSIM-CMG. In Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 (pp. 475-478). (Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014; Vol. 2). Nano Science and Technology Institute.

Khandelwal, S. ; Duarte, J. P. ; Paydavosi, N. ; Chauhan, Y. S. ; Gu, J. J. ; Si, M. ; Ye, P. D. ; Hu, Chen-Ming. / InGaAs FinFET modeling using industry standard compact model BSIM-CMG. Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Nano Science and Technology Institute, 2014. pp. 475-478 (Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014).

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title = "InGaAs FinFET modeling using industry standard compact model BSIM-CMG",

abstract = "In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen in carrier mobility behavior of InGaAs FinFETs compared to silicon devices can be accounted for in the model. Furthermore, the calibrated model is used for performance projection in these devices. It is found that parasitic resistance and mobility reduction with vertical field limit the performance of these devices.",

keywords = "BSIM-CMG, Compact models, InGaAs FinFETs",

author = "S. Khandelwal and Duarte, {J. P.} and N. Paydavosi and Chauhan, {Y. S.} and Gu, {J. J.} and M. Si and Ye, {P. D.} and Chen-Ming Hu",

year = "2014",

month = jan,

day = "1",

language = "English",

isbn = "9781482258271",

series = "Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014",

publisher = "Nano Science and Technology Institute",

pages = "475--478",

booktitle = "Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014",

note = "null ; Conference date: 15-06-2014 Through 18-06-2014",

}

Khandelwal, S, Duarte, JP, Paydavosi, N, Chauhan, YS, Gu, JJ, Si, M, Ye, PD & Hu, C-M 2014, InGaAs FinFET modeling using industry standard compact model BSIM-CMG. in Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014, vol. 2, Nano Science and Technology Institute, pp. 475-478, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014, Washington, DC, United States, 15/06/14.

InGaAs FinFET modeling using industry standard compact model BSIM-CMG. / Khandelwal, S.; Duarte, J. P.; Paydavosi, N.; Chauhan, Y. S.; Gu, J. J.; Si, M.; Ye, P. D.; Hu, Chen-Ming.

Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Nano Science and Technology Institute, 2014. p. 475-478 (Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InGaAs FinFET modeling using industry standard compact model BSIM-CMG

AU - Khandelwal, S.

AU - Duarte, J. P.

AU - Paydavosi, N.

AU - Chauhan, Y. S.

AU - Gu, J. J.

AU - Si, M.

AU - Ye, P. D.

AU - Hu, Chen-Ming

PY - 2014/1/1

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N2 - In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen in carrier mobility behavior of InGaAs FinFETs compared to silicon devices can be accounted for in the model. Furthermore, the calibrated model is used for performance projection in these devices. It is found that parasitic resistance and mobility reduction with vertical field limit the performance of these devices.

AB - In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen in carrier mobility behavior of InGaAs FinFETs compared to silicon devices can be accounted for in the model. Furthermore, the calibrated model is used for performance projection in these devices. It is found that parasitic resistance and mobility reduction with vertical field limit the performance of these devices.

KW - BSIM-CMG

KW - Compact models

KW - InGaAs FinFETs

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M3 - Conference contribution

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T3 - Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014

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BT - Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014

PB - Nano Science and Technology Institute

Y2 - 15 June 2014 through 18 June 2014

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Khandelwal S, Duarte JP, Paydavosi N, Chauhan YS, Gu JJ, Si M et al. InGaAs FinFET modeling using industry standard compact model BSIM-CMG. In Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Nano Science and Technology Institute. 2014. p. 475-478. (Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014).