@inproceedings{fb98a897f05a45d2809f855e1ec4f335,
title = "InGaAs FinFET modeling using industry standard compact model BSIM-CMG",
abstract = "In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen in carrier mobility behavior of InGaAs FinFETs compared to silicon devices can be accounted for in the model. Furthermore, the calibrated model is used for performance projection in these devices. It is found that parasitic resistance and mobility reduction with vertical field limit the performance of these devices.",
keywords = "BSIM-CMG, Compact models, InGaAs FinFETs",
author = "S. Khandelwal and Duarte, {J. P.} and N. Paydavosi and Chauhan, {Y. S.} and Gu, {J. J.} and M. Si and Ye, {P. D.} and Chen-Ming Hu",
year = "2014",
month = jan,
day = "1",
language = "English",
isbn = "9781482258271",
series = "Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014",
publisher = "Nano Science and Technology Institute",
pages = "475--478",
booktitle = "Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014",
note = "null ; Conference date: 15-06-2014 Through 18-06-2014",
}