Influences of the residual argon gas and thermal annealing on Ta 2O5 and SiO2 thin film filters

Wen Jen Liu*, Chih Min Chen, Yin-Chieh Lai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

The influences of the residual argon gas and thermal annealing processes on the optical property, stress, compositional and microstructure evolution of Tantalum pentaoxide (Ta2O5) and silicon dioxides (SiO 2) were investigated. Tantalum pentaoxide and silicon dioxides optical thin films were deposited on the quartz glass substrate by argon ion beam assisted deposition. It was observed by X-ray diffraction (XRD) that the amorphous structure existed in all of the Ta2O5 thin films. The Ta2O5 thin films indicated that the ratio value of oxygen to tantalum was insufficient and the residual argon gas in the thin films might result in film and device instabilities.

Original languageEnglish
Article number40
Pages (from-to)273-284
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5723
DOIs
StatePublished - 21 Jul 2005
EventOptical Components and Materials II - San Jose, CA, United States
Duration: 24 Jan 200525 Jan 2005

Keywords

  • Atomic force microscopy (AFM)
  • Dense wavelength division multiplexing (DWDM)
  • Ion beam assisted deposition (IBAD)
  • Optical properties
  • Thin film filter (TFF)

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