Influences of indium fluctuation to the carrier transport, auger recombination, and efficiency droop

Yuh Renn Wu, Shu Ting Yeh, Da Wei Lin, Chi Kang Li, Hao-Chung Kuo, James S. Speck

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

Our recent preliminary studies show that the nanoscale indium fluctuation in InGaN quantum well LED plays an important key role in carrier transport, radiative recombination, Auger, and droop effects. In this paper, we further examine the influence indium fluctuation for different degree of fluctuation, auger coefficients, and non-radiative lifetime. The influence of different AlGaN electronic blocking layer will be discussed in this paper. The commercial grade LED will be used for comparison to examine the model accuracy.

Original languageEnglish
Title of host publication13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013
Pages111-112
Number of pages2
DOIs
StatePublished - 23 Dec 2013
Event13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013 - Vancouver, BC, Canada
Duration: 19 Aug 201322 Aug 2013

Publication series

Name13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013

Conference

Conference13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013
CountryCanada
CityVancouver, BC
Period19/08/1322/08/13

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