TY - JOUR
T1 - Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating prescursor
AU - Chang, Kow-Ming
AU - Wang, Shih Wei
AU - Wu, Chin Jen
AU - Yeh, Ta Hsun
AU - Li, Chii Horng
AU - Yang, Ji Yi
PY - 1996/8/26
Y1 - 1996/8/26
N2 - In this letter, flourinated silicon oxide (FxSiOy) films were deposited in the electron cyclotron resonance (ECR) chemical vapor deposition system with SiH4, O2, and CF4 as the reaction gases. The CF4, in contrast to SiF4 or FSi(OC2H5)3 used in the other reports, is an indirect fluorinating source. The fluorinating mechanism is similar to that of the etching of oxide by fluorocarbon plasma, therefore, the thermal stability of the incorporated fluorine must strongly depend on the deposition temperature. It is found that the thermal stability and moisture resistance are greatly improved by increasing the deposition temperature. However, the higher deposition temperature also results in a higher compressed stress and dielectric constant. Besides, to get the moisture resistance, the deposition temperature must be above 300°C. On the other hand, ECR-SiO2 (without fluorination), even deposited at room temperature, is shown to have a good water resistance. Therefore, by choosing deposition temperature for FxSiOy to have enough thermal tolerance and capping with ECR-SiO2, the moisture resistor is suggested for the inter metal dielectric applications.
AB - In this letter, flourinated silicon oxide (FxSiOy) films were deposited in the electron cyclotron resonance (ECR) chemical vapor deposition system with SiH4, O2, and CF4 as the reaction gases. The CF4, in contrast to SiF4 or FSi(OC2H5)3 used in the other reports, is an indirect fluorinating source. The fluorinating mechanism is similar to that of the etching of oxide by fluorocarbon plasma, therefore, the thermal stability of the incorporated fluorine must strongly depend on the deposition temperature. It is found that the thermal stability and moisture resistance are greatly improved by increasing the deposition temperature. However, the higher deposition temperature also results in a higher compressed stress and dielectric constant. Besides, to get the moisture resistance, the deposition temperature must be above 300°C. On the other hand, ECR-SiO2 (without fluorination), even deposited at room temperature, is shown to have a good water resistance. Therefore, by choosing deposition temperature for FxSiOy to have enough thermal tolerance and capping with ECR-SiO2, the moisture resistor is suggested for the inter metal dielectric applications.
UR - http://www.scopus.com/inward/record.url?scp=0000094898&partnerID=8YFLogxK
U2 - 10.1063/1.117423
DO - 10.1063/1.117423
M3 - Article
AN - SCOPUS:0000094898
VL - 69
SP - 1238
EP - 1240
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 9
ER -