Influence of Zn/O flux ratio and Mn-doped ZnO buffer on the plasma-assisted molecular beam epitaxy of ZnO on c-plane sapphire

J. S. Wang*, C. S. Yang, M. J. Liou, C. X. Wu, K. C. Chiu, Wu-Ching Chou

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

This work investigated the influence of Zn/O flux ratio and Mn-doped ZnO buffer layer on the epitaxial growth of ZnO grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Atomic force microscopy (AFM), photoluminescence (PL) and X-ray diffraction (XRD) measurements indicated that a small amount residual strain of ZnO epilayers was further relaxed under stoichiometric growth conditions due to the better surface migration of the adatoms. Moreover, we observed that a small amount of Mn doping led to obtain a flatter surface with stronger lattice relaxation maybe due to the greatly enhanced surface migration of the adatoms. By adding a Mn-doped ZnO buffer layer the optical and electrical properties of the ZnO epilayers had significant improvement.

Original languageEnglish
Pages (from-to)4503-4506
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number21
DOIs
StatePublished - 15 Oct 2008

Keywords

  • A1. Characterization
  • A1. Reflection high-energy electron diffraction
  • A3. Molecular beam epitaxy
  • B1. Oxides
  • B1. Zinc compounds
  • B2. Semiconducting II-VI materials

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