Influence of thin protective InAs layers on the optical quality of AlGaAs and quantum wells

K. L. Tsai*, K. H. Chang, C. P. Lee, Kai-Feng Huang, Y. Chang, J. C. Fan, D. G. Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Influence of a thin protective but subsequently evaporated InAs layer on the regrowth of AlGaAs has been studied. It was found that although most of the InAs could be evaporated by thermal desorption, some would react with Al 0.36Ga0.64As to form InAlGaAs. These InAlGaAs islands act as potential wells for carrier recombination and dominate the photoluminescence spectrum. Transmission electron microscopy photographs show that dislocations are formed near the islands. These defects are caused by lattice mismatch between AlGaAs and InAlGaAs. These islands and defects strongly affect the optical quality of surrounding Al0.36Ga0.64As and quantum wells.

Original languageEnglish
Pages (from-to)2449-2452
Number of pages4
JournalJournal of Applied Physics
Volume72
Issue number6
DOIs
StatePublished - 1 Dec 1992

Fingerprint Dive into the research topics of 'Influence of thin protective InAs layers on the optical quality of AlGaAs and quantum wells'. Together they form a unique fingerprint.

Cite this