Influence of Ta content on the physical properties of SrBi 2 Ta 2 O 9 ferroelectric thin films

Fan Yi Hsu, Ching Chich Leu, Chao-Hsin Chien, Chen Ti Hu*

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We have investigated the effect that the Ta content has on the ferroelectric properties of strontium bismuth tantalate (SBT) thin films synthesized using metalorganic decomposition (MOD) and spin coating techniques. The physical properties of these SBT samples were strongly dependent upon the Ta ratio. Polarization measurements revealed that Ta-deficient SBT exhibited a relatively low coercive field (2E c - 87 kV/cm) and a high remanent polarization (2P r - 15 μC/cm 2 ). The value of 2P r decreased as the Ta ratio in SBT increased. The improved ferroelectric properties of the Ta-deficient SBT samples may have resulted from the uniformly well-grown bismuth-layered-structured (BLS) phases of the films and their highly preferential orientation along the a and b axes. We suggest that the incorporation of Ta vacancies plays an important role in enhancing the crystallinities and microstructures of Ta-deficient SBT films.

Original languageEnglish
Pages (from-to)3124-3133
Number of pages10
JournalJournal of Materials Research
Volume21
Issue number12
DOIs
StatePublished - 1 Dec 2006

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