Influence of structural anisotropy to anisotropic electron mobility in a-plane InN

Hyeyoung Ahn*, J. W. Chia, H. M. Lee, S. Gwo

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

This study reports on the anisotropic electron transport properties and a correlation between the electron mobility (μ) and the stacking faults (SFs) in the a-plane InN film. Electron mobilities measured by terahertz time-domain spectroscopy and Hall effect measurement along the in-plane [1 ̄ 100] (c ) orientation were much higher than those of the in-plane [0001] (c) orientation. This result shows a sharp contrast to higher defect density for the c orientation as measured by x-ray diffraction. The electrons transporting through the planar SFs aligned along the c direction are expected to experience more scattering by defects, resulting in lower μ for the c orientation.

Original languageEnglish
Article number061904
JournalApplied Physics Letters
Volume102
Issue number6
DOIs
StatePublished - 11 Feb 2013

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