Influence of sputtering gas on resistivity of thin Ni silicide films

H. Imamura*, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ni silicide film, formed by stacked structure of nickel and silicon, have been fabricated by RF magnetron sputtering using different gas species. The resistivity of the silicide films have been measured. While the resistivity of the film with Ar gas sputtering gradually decreases with higher annealing temperature, films with Kr gas sputtering show resistivity as low as the bulk ones in a wide process-temperature window. A model to explain the mechanism difference has been proposed.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2015, CSTIC 2015
EditorsQinghuang Lin, Beichao Zhang, Larry Chen, Hsiang-Lan Lung, Kafei Lai, Dong Chen, Ying Zhang, David Huang, Kuochun Wu, Cor Claeys, Steve Liang, Ru Huang, Peilin Song, Hanming Wu, Qi Wang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479972418
DOIs
StatePublished - 8 Jul 2015
Event2015 China Semiconductor Technology International Conference, CSTIC 2015 - Shanghai, China
Duration: 15 Mar 201516 Mar 2015

Publication series

NameChina Semiconductor Technology International Conference 2015, CSTIC 2015

Conference

Conference2015 China Semiconductor Technology International Conference, CSTIC 2015
CountryChina
CityShanghai
Period15/03/1516/03/15

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