Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

L. W. Wu, S. J. Chang*, T. C. Wen, Y. K. Su, J. F. Chen, W. C. Lai, Cheng-Huang Kuo, C. H. Chen, J. K. Sheu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

96 Scopus citations

Abstract

A detailed study on the effects of Si-doping in the GaN barrier layers of InGaN-GaN multiquantum well (MQW) light-emitting diodes (LEDs) has been performed. Compared with unintentionally doped samples, X-ray diffraction results indicate that Si-doping in barrier layers can improve the crystal and interfacial qualities of the InGaN-GaN MQW LEDs. It was also found that the forward voltage is 3.5 and 4.52 V, the 20-mA luminous intensity is 36.1 and 25.1 mcd for LEDs with a Si-doped barrier and an unintentionally doped barrier, respectively. These results suggests that one can significantly improve the performance of InGaN-GaN MQW LEDs by introducing Si doping in the GaN barrier layers.

Original languageEnglish
Pages (from-to)446-450
Number of pages5
JournalIEEE Journal of Quantum Electronics
Volume38
Issue number5
DOIs
StatePublished - 1 May 2002

Keywords

  • InGaN-GaN
  • Light emitting diode (LED)
  • Multiple quantum well (MQW)

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