Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy

Yung Chung Pan*, Wen Hsiung Lee, Chen Ke Shu, Heng Ching Lin, Chung I. Chiang, Horng Chang, Deng Sung Lin, Ming Chih Lee, Wei-Kuo Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

Indium nitride films have been successfully grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) using TMln and NH3 as source precursors. Experimental results indicated that pregrowth treatments, such as buffer layer growth, nitridation temperature and nitridation duration have dramatic effects on the growth of the InN films. For films nitridated at 1,000°C for 40 min without any buffer layer growth, we obtained an InN film quality with Hall mobility, carrier concentration and line width of Raman E2 mode of 270cm2/V·s, 5 × 10 19cm-3 and 4.5 cm-1, respectively, which is among the best quality ever reported for such type of film grown by MOVPE.

Original languageEnglish
Pages (from-to)645-648
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number2 A
DOIs
StatePublished - 1 Dec 1999

Keywords

  • Hall
  • InN
  • MOVPE
  • Nitridation
  • Raman

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