Influence of processing parameters on the microstructure and electrical properties of multilayer-chip ZnO varistors

Yih Shing Lee*, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

Multilayer-chip varistors based on ZnO with lead zinc borosilicate glass instead of Bi2O3 were prepared by tape casting and green-sheet lamination processes using a non-aqueous slurry system. The influences of slurry composition and the degassing process on the microstructure and non-ohmic properties of multilayer-chip varistors were studied. The electrical properties of chip varistors can be influenced substantially by the pore defects resulting from an unsuitable slurry formulation for the tape-casting process. The sintering temperature of the chip varistors was lowered to 1100 ‡C and silver-palladium alloys were employed as internal electrodes. The non-linear coefficients of 27-32 and breakdown voltages of 7.6-24.5 V were achieved by controlling the green-sheet thickness and sintering temperatures in the present study. The δVbr/Vbr values for the chip varistors lie within ± 10%, indicating excellent surge-withstanding capability.

Original languageEnglish
Pages (from-to)90-96
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
Volume6
Issue number2
DOIs
StatePublished - 1 Apr 1995

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